Aluminum Nitride Substrate

Product use: heat dissipation substrate, LED packaging substrate, semiconductor substrate, thin film circuit substrate, power resistor substrate.

1. High strength and high thermal conductivity. 2. Close to the thermal expansion coefficient of silicon, high reliability for loading large silicon chips and thermal cycles. 3. High electrical insulation and small dielectric constant. 4. Good corrosion resistance to molten metal 5. Very low impurity content, non-toxic, high purity.
ltem Unit Test Standard Model － ZT-A1N180 Material number － A1N Colour － Beige Density g/cm³ 3.33 Thermal conductivity 25℃ W/(m.k) >170 Flexural Strength Mpa 400 Young's modulus GPa 320 Vickers hardness Gpa ≥11 Fracture toughness MPa · √m 3.0 Warpage (Long side)‰ ≤2 Surface roughness um 0.2～0.6 Coefficient of thermal expansion 10-⁶ 20～300℃ 4.3 300～800℃ 5.0 Dreakdown strength Kv/mm ≥15 Dielectric constant 1 MHz 9 Volume resistivity 20℃.ù.cm ≥10¹⁴

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ltem	Unit		Test Standard
Model	－		ZT-A1N180
Material number	－		A1N
Colour	－		Beige
Density	g/cm³		3.33
Thermal conductivity	25℃ W/(m.k)		>170
Flexural Strength	Mpa		400
Young's modulus	GPa		320
Vickers hardness	Gpa		≥11
Fracture toughness	MPa · √m		3.0
Warpage	(Long side)‰		≤2
Surface roughness	um		0.2～0.6
Coefficient of thermal expansion	10-⁶	20～300℃	4.3
		300～800℃	5.0
Dreakdown strength	Kv/mm		≥15
Dielectric constant	1 MHz		9
Volume resistivity	20℃.ù.cm		≥10¹⁴